IMPLEMENTATION OF THRESHOLD- AND MEMORY-SWITCHING MEMRISTORS BASED ON ELECTROCHEMICAL METALLIZATION IN AN IDENTICAL FERROELECTRIC ELECTROLYTE

Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

Abstract The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different aluminum lotion resistive-switching characteristics.Herein, we describe ECM devices comprising the same ferroelectric PbZr0.52Ti0.48O3 (PZT) electrolyte, which can sustain both neuron

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